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 Ordering number : EN8526
2SA2180
PNP Epitaxial Planar Silicon Transistor
2SA2180
Applications
*
50V / 5A High-Speed Switching Applications
High-speed switching applications (switching regulator, driver circuit).
Features
* * * *
Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings --50 --50 --6 --5 --8 --1 2 20 150 --55 to +150 Unit V V V A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=-40V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--125mA VCE=-2V, IC=--3.75A VCE=-10V, IC=--300mA VCB=-10V, f=1MHz Ratings min typ max --10 --10 200 50 130 55 MHz pF 500 Unit A A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2505FA MS IM TB-00001827 No.8526-1/4
2SA2180
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--2.5A, IB=--125mA IC=--2.5A, IB=--125mA IC=--100A, IE=0A IC=--1mA, RBE= IE=--100A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --6 75 100 40 Ratings min typ --250 max --500 --1.2 Unit mV V V V V ns ns ns
Package Dimensions unit : mm 7508-002
10.0 3.2
3.5 7.2
Switching Time Test Circuit
PW=20s D.C.1%
IB1 IB2 OUTPUT
4.5 2.8
INPUT VR 50
16.0
RB + 100F + 470F
RL
18.1
VBE=5V
VCC= --25V
1.6 1.2 0.75
14.0
5.6
IC=20IB1= --20IB2= --5A
0.7
123
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
2.55
2.55
--180m
A --16 0
--4.5
--1
A 00m
A --30m A
mA
--5.0
IC -- VCE
A --80m
--2.0
IC -- VCE
--2 0 mA
--60mA
Collector Current, IC -- A
--1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2
--16mA
Collector Current, IC -- A
--200m
--3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0
A
--12
4 --1 0m A
--40m
--4.0
0m
A
--40mA
--14mA --12mA
--18mA
--10mA
--8mA
--20mA
--6mA
--4mA
--2mA
--10mA
--5mA
IB=0mA
--0.5 --1.0 --1.5 --2.0 IT09974
0 0 --0.2 --0.4 --0.6
IB=0mA
--0.8 --1.0 IT09975
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.8526-2/4
2SA2180
--6
IC -- VBE
VCE= --2V
1000 7 5
hFE -- IC
VCE= --2V
Ta=75C
--5
Collector Current, IC -- A
25C
--4
DC Current Gain, hFE
3 2
--25C
--3
100 7 5 3 2
--2
--1
Ta= 75 C 25 C --25 C
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2 IT09976
10 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7
Base-to-Emitter Voltage, VBE -- V
1000 7 5
Collector Current, IC -- A
1000
IT09977
hFE -- IC
fT -- IC
VCE= --10V
Ta=25C Gain-Bandwidth Product, fT -- MHz
7
7 5 3 2
DC Current Gain, hFE
3 2
VC = E
0 --2
--2
100 7 5 3 2
100 7 5 3 2
mV 00 --5 V 0m
V
V --1
10 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
10 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
57 IT09979
Collector Current, IC -- A
1000 7
IT09978 --1.0 7
Cob -- VCB
f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
VCE(sat) -- IC
IC / IB=20
Output Capacitance, Cob -- pF
5 3 2
5 3 2
100 7 5 3 2
--0.1 7 5 3 2
C 75 a= T 5C 5C --2 2
10 --0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
--0.01 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7
Collector-to-Base Voltage, VCB -- V
3 2
IT09980 3
VCE(sat) -- IC
Collector Current, IC -- A
IT09981
VBE(sat) -- IC
IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
IC / IB=20
2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
--1.0 7 5 3 2 --0.1 7 5 3 2
--1.0
Ta= --25C
7 5
C 75 Ta= C C --25 25
25C
75C
3
--0.01 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7
2 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7
Collector Current, IC -- A
IT09982
Collector Current, IC -- A
IT09983
No.8526-3/4
2SA2180
2 --10 7 5
Forward Bias A S O
ICP= --8A
Collector Dissipation, PC -- W
2.5
PC -- Ta
Collector Current, IC -- A
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IC= --5A
2.0
s 0 50 1 m s ms
10
0m
s
DC
10
1.5
No
1.0
he
op era n tio
at
sin
k
0.5
--0.01 --0.1
Tc=25C Single pulse
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7
0 0 20 40 60 80 100 120 140 160 IT09984
Collector-to-Emitter Voltage, VCE -- V
25
Ambient Temperature, Ta -- C
IT09985
PC -- Tc
Collector Dissipation, PC -- W
20
15
10
5
0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C
IT09986
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice.
PS No.8526-4/4


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